1. Bending stress: The stress limit of silicon wafers during the bending process is usually between a few hundred megapascals (MPa) and several thousand megapascals (GPa). The specific value depends on factors such as the thickness, size and material strength of the silicon wafer.
2. Surface stress: The stress limit on the surface of silicon wafers is usually small, generally between tens of MPa (MPa) and hundreds of MPa (MPa). The magnitude of surface stress is also affected by factors such as surface treatment and film coating.